MRFE6VP5600HR6 MRFE6VP5600HSR6
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
50
10
02010
30
40
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 3. Capacitance versus Drain--Source Voltage
C, CAPACITANCE (pF)
Ciss
1000
100
Measured with
±30 mV(rms)ac @ 1 MHz
VGS
=0Vdc
Note:
Each side of device measured separately.
1
57
64
31
Pin, INPUT POWER (dBm) PULSED
Figure 4. Pulsed Output Power versus
Input Power
62
32 33 34 35 36 37
P
out
, OUTPUT POWER (dBm) PULSED
61
58
Actual
Ideal
VDD
=50Vdc,IDQ
= 100 mA, f = 230 MHz
Pulse Width = 100
μsec, 20% Duty Cycle
P1dB = 58.0 dBm
(632 W)
60
59
63
P3dB = 58.3 dBm (679 W)
P2dB = 58.2 dBm (664 W)
27
20
90
100
24
70
50
Pout, OUTPUT POWER (WATTS) PULSED
Figure 5. Pulsed Power Gain and Drain Efficiency
versus Output Power
G
ps
, POWER GAIN (dB)
η
D,
DRAIN EFFICIENCY (%)
22
20
1000
21
40
60
80
23
25
17
24
0
21
20
Pout, OUTPUT POWER (WATTS) PULSED
Figure 6. Pulsed Power Gain versus
Output Power
G
ps
, POWER GAIN (dB)
100
19
700
VDD
=50Vdc,IDQ
= 100 mA, f = 230 MHz
Pulse Width = 100
μsec, 20% Duty Cycle
18
200 400 500 600300
VDD
=30V
50 V
22
23
26
25
27
35 V
40 V
45 V
20
90
0
Pout, OUTPUT POWER (WATTS) PULSED
Figure 7. Pulsed Drain Efficiency versus
Output Power
70
100 200 300 400 500 600
60
30
50
40
80
700
Figure 8. Pulsed Power Gain and Drain Efficiency
versus Output Power
Pout, OUTPUT POWER (WATTS) PULSED
G
ps
, POWER GAIN (dB)
20
22
21
100 1000
ηD
23
25_C
TC
=--30_C
85_C
Gps
VDD
=50Vdc,IDQ
= 100 mA, f = 230 MHz
Pulse Width = 100
μsec, 20% Duty Cycle
40
60
50
20
30
η
D
,
DRAIN EFFICIENCY (%)
85_C
VDD
=50Vdc,IDQ
= 100 mA, f = 230 MHz
Pulse Width = 100
μsec, 20% Duty Cycle
VDD
=30V
50 V
35 V
40 V
45 V
η
D,
DRAIN EFFICIENCY (%)
25
24
27
26
C
70
80
90
Crss
ηD
Gps
VDD
=50Vdc,IDQ
= 100 mA, f = 230 MHz
Pulse Width = 100
μsec, 20% Duty Cycle
26
30
40
40
Coss
-- 3 0_
25_C
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